"非晶管+amorphous+tubular+alloy"指的是一种非晶态管状合金材料，具有非晶结构的特性。这种合金材料在工业和科学领域中具有重要的应用价值。它的特点包括高强度、耐磨性和耐腐蚀性，适用于制造高性能的工程零部件和设备。除此之外，非晶管+amorphous+tubular+alloy还具有良好的导电性和热导率，因此在电子技术和热管理领域也有着广泛的应用。在工程领域，非晶管+amorphous+tubular+alloy已经成为替代传统材料的主要选择之一。因其独特的特性，这种材料也被广泛用于创新设计和高科技领域的应用中。
非晶管,amorphous tubular alloy
1)amorphous tubular alloy非晶管
2)a-SiTFT非晶硅晶体管
1.The inner link of the electric properties ofa-SiTFT and the optical properties of TFT-AMLCD was analyzed.分析非晶硅晶体管 (a- Si TFT)的电学特性与薄膜晶体管 -有源矩阵液晶显示 (FTF-AMLCD)光学特性的内在联系。
3)amorphous carbon nanotubes(ACNTs)非晶碳纳米管
4)asymmetric thyristor非对称晶闸管
5)A-Si TFT非晶硅薄膜晶体管
1.New Type a-Si TFT Used as Room Temperature Infrared Detector;用于室温红外探测的新型非晶硅薄膜晶体管
英文短句/例句
1.Study of High Image Quality Amorphous-Silicon Thin Film Transistor Liquid Crystal Displays高像质非晶硅薄膜晶体管液晶显示器的研究
2.The Effects of Active Layer Thickness on the Characteristics of Amorphous Silicon Thin Film Transistors有源层厚度对非晶硅薄膜晶体管特性的影响
3.Design of Construct Parameters of High Image Quality a-Si TFT LCD;高像质非晶硅薄膜晶体管结构参数的设计
4.Numerical Simulation of Unsaturated Output Current of Amorphous-Silicon Thin-Film Transistors非晶硅薄膜晶体管中不饱和输出电流的数值仿真
5.Metal-Induced Crystallization of Amorphous Silicon and Silicon Germanium Films非晶硅和非晶硅锗薄膜的金属诱导结晶
6.Fabrication of P-type Amorphous Silicon Thin Films and Poly-Silicom by PECVD;PECVD法制备P型非晶硅薄膜及多晶硅薄膜
7.A Research on Driving Module of Poly-Si TFT OLED;多晶硅薄膜晶体管有机发光显示模块的研制
8.Study and Simulation on Reliability of Poly-Si Thin Film Transistor;多晶硅薄膜晶体管可靠性研究及其模拟
9.Modeling of the Band-to-Band Tunneling Current in Polysilicon TFT"s Leakage Region多晶硅薄膜晶体管泄漏区带间隧穿电流的建模
10.Fabrication of LTPS TFT with High Qualities and Design for Integration of Peripheral Drive Circuits;高品质低温多晶硅薄膜晶体管的制作与周边一体化设计
11.Finite Element Analysis of TSOP Failure during Mould Release and Temperature Distribution in Polysilicon TFT under Self-heating Stress;TSOP失效和多晶硅薄膜晶体管自加热效应的有限元分析和模拟
12.Study on the Simulation Technique in Self-heating Effect and KNIK Effect of Thin Film Transistors;多晶硅薄膜晶体管自加热效应和KINK效应的模拟技术研究
13.TFT thin film transistor薄膜晶体管，有源矩阵lcd
14.Aluminum-induced Rapid Crystallization of Amorphous Silicon Films in an Electric Field at Low Temperature;铝诱导非晶硅薄膜的场致低温快速晶化
15.Crystallization behavior of amorphous silicon thin films induced by excimer laser irradiation准分子激光引起的非晶硅薄膜晶化行为的研究
16.The Preparation of Device-Quality Hydrogenated Amorphous Silicon Thin Films by Mwecr-Cvd Assisted by Hot-Wire;热丝辅助MWECR-CVD制备器件级非晶硅薄膜
17.Research Progress on the Hydrogen Content Control of Hydrogenated Amorphous Silicon Thin Films氢化非晶硅薄膜H含量控制研究进展
18.Process Research on PECVD SiN-x:H Film for Crystalline Silicon Solar Cells晶体硅太阳能电池PECVD SiNx:H薄膜工艺研究
相关短句/例句
a-SiTFT非晶硅晶体管
1.The inner link of the electric properties ofa-SiTFT and the optical properties of TFT-AMLCD was analyzed.分析非晶硅晶体管 (a- Si TFT)的电学特性与薄膜晶体管 -有源矩阵液晶显示 (FTF-AMLCD)光学特性的内在联系。
3)amorphous carbon nanotubes(ACNTs)非晶碳纳米管
4)asymmetric thyristor非对称晶闸管
5)A-Si TFT非晶硅薄膜晶体管
1.New Type a-Si TFT Used as Room Temperature Infrared Detector;用于室温红外探测的新型非晶硅薄膜晶体管
6)amorphous silicon thin-film transistor (a-Si:H TFT)非晶硅薄膜晶体管(a-Si TFT)
延伸阅读
晶体管-晶体管逻辑电路晶体管-晶体管逻辑电路transistor-transistorlogic集成电路输入级和输出级全采用晶体管组成的单元门电路。简称TTL电路。它是将二极管-晶体管逻辑电路（DTL）中的二极管，改为使用多发射极晶体管而构成。TTL电路于1962年研制成功，基本门电路的结构和元件参数，经历了3次大的改进。同DTL电路相比，TTL电路速度显著提高，功耗大为降低。仅第一代TTL电路产品，就使开关速度比DTL电路提高5～10倍。采用肖特基二极管的第三代TTL电路，开关时间可缩短到3～5纳秒。绝大部分双极型集成电路，都是TTL电路产品。
本文如果对你有帮助，请点赞收藏《非晶管 amorphous tubular alloy英语短句 例句大全》，同时在此感谢原作者。
